? 2008 ixys corporation, all rights reserved ds99894a (04/08) v dss = 1200v i d25 = 12a r ds(on) 1.35 t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 30 a i a t c = 25 c6a e as t c = 25 c 500 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 543 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus 220) 11..65 / 2.5..14.6 n/lb. weight to-247 6 g plus 220 types 4 g g = gate d = drain s = source tab = drain ixfh12n120p IXFV12N120P IXFV12N120Ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1200 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1.15 1.35 polar tm power mosfet hiperfet tm g s d (tab) plus220smd (ixfv_s) to-247 (ixfh) plus220 (ixfv) g d s d (tab) d (tab) applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. ixfh12n120p IXFV12N120P IXFV12N120Ps symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 5 9 s c iss 5400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 290 pf c rss 40 pf r gi gate input resistance 1.5 t d(on) 34 ns t r 25 ns t d(off) 62 ns t f 34 ns q g(on) 103 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 29 nc q gd 41 nc r thjc 0.23 c /w r thcs (to-247, plus 220) 0.21 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 0.5 c i rm 6 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 6a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p plus220 (ixfv) outline plus220smd (ixfv_s) outline
? 2008 ixys corporation, all rights reserved ixfh12n120p IXFV12N120P IXFV12N120Ps fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 0246810121416 v ds - volts i d - amperes v gs = 10v 8v 5 v 7 v 6 v fig. 2. extended output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0 4 8 121620242832 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 6a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 12a i d = 6a fig. 5. r ds(on) normalized to i d = 6a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 02468101214161820 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 12 13 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh12n120p IXFV12N120P IXFV12N120Ps ixys ref: f_12n120p(76) 04-01-08-a fig. 7. input admittance 0 2 4 6 8 10 12 14 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 024681012141618 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 600v i d = 6a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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